ISBN: 9783319316536
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulation… Más…
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ISBN: 9783319316536
This book provides a single-source reference to the state-of-the art intunneling field effect transistors (TFETs). Readers will learn the TFETsphysics from advanced atomistic simulations… Más…
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ISBN: 9783319316536
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2016, ISBN: 9783319316536
eBooks, eBook Download (PDF), 1st ed. 2016, [PU: Springer International Publishing], Springer International Publishing, 2016
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ISBN: 9783319316536
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ISBN: 9783319316536
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulation… Más…
ISBN: 9783319316536
This book provides a single-source reference to the state-of-the art intunneling field effect transistors (TFETs). Readers will learn the TFETsphysics from advanced atomistic simulations… Más…
ISBN: 9783319316536
*Tunneling Field Effect Transistor Technology* / pdf eBook für 96.49 € / Aus dem Bereich: eBooks, Sachthemen & Ratgeber, Technik Medien > Bücher nein eBook als pdf eBooks > Sachthemen & R… Más…
2016, ISBN: 9783319316536
eBooks, eBook Download (PDF), 1st ed. 2016, [PU: Springer International Publishing], Springer International Publishing, 2016
ISBN: 9783319316536
Tunneling Field Effect Transistor Technology: ab 117.49 € eBooks > Sachthemen & Ratgeber > Technik Springer-Verlag GmbH, Springer-Verlag GmbH
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Detalles del libro - Tunneling Field Effect Transistor Technology
EAN (ISBN-13): 9783319316536
ISBN (ISBN-10): 3319316532
Año de publicación: 2016
Editorial: Springer International Publishing
Libro en la base de datos desde 2016-08-15T20:34:22-05:00 (Mexico City)
Página de detalles modificada por última vez el 2023-04-17T08:23:30-06:00 (Mexico City)
ISBN/EAN: 9783319316536
ISBN - escritura alterna:
3-319-31653-2, 978-3-319-31653-6
Mode alterno de escritura y términos de búsqueda relacionados:
Título del libro: the field, tunnel, transistor, tunneling
Datos del la editorial
Autor: Lining Zhang; Mansun Chan
Título: Tunneling Field Effect Transistor Technology
Editorial: Springer; Springer International Publishing
213 Páginas
Año de publicación: 2016-04-09
Cham; CH
Idioma: Inglés
96,29 € (DE)
99,00 € (AT)
118,00 CHF (CH)
Available
IX, 213 p. 147 illus., 122 illus. in color.
EA; E107; eBook; Nonbooks, PBS / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Schaltkreise und Komponenten (Bauteile); Verstehen; Carbon Nanotube TFETs; Low Power SRAM Design; MOSFETs; Nanoscaled Field Effect Transistors; Nanowire Field Effect Transistors; TFETs; Tunneling Field Effect Transistors; B; Electronic Circuits and Systems; Electronics and Microelectronics, Instrumentation; Engineering; Elektronik; BB
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications;· Enables design of power-efficient integrated circuits, with low power consumption TFETs.comprehensive reference to tunneling field effect transistors (TFETs) all aspects of TFETs, from device process to modeling and applications Enables design of power-efficient integrated circuits, with low power consumption TFETs
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