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ISBN: 9783540714903
He worked in the Microelectronics Research Group of FORTH until 1992. Since 1999, he is research director and head of the MBE laboratory at the Institute of Materials Science of the Natio… Más…
2021, ISBN: 9783540714903
[ED: Buch], [PU: Springer-Verlag GmbH], Neuware - Will nanoelectronic devices continue to scale according to Moore s law At this moment, there is no easy answer since gate scaling is rap… Más…
2007
ISBN: 3540714901
2007 Gebundene Ausgabe Halbleiter / Elektronik, Elektronik / Mikroelektronik, Mikroelektronik, CMOS; Standard; Transistors; dielectricproperties; dielectrics; electronics; Material; mic… Más…
2007, ISBN: 9783540714903
2007 Neubindung, Buchschnitt leicht verkürzt, Buchecken leicht angestoßen 3768560/12 Versandkostenfreie Lieferung Standard,semiconductor devices,Transistors,CMOS,transistor,dielectrics,se… Más…
2007, ISBN: 3540714901
Advanced Gate Stacks for High-Mobility Semiconductors ab 192.49 € als gebundene Ausgabe: Auflage 2007. Aus dem Bereich: Bücher, Wissenschaft, Technik, Medien > Bücher, Springer Berlin Hei… Más…
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Detalles del libro - Advanced Gate Stacks for High-Mobility Semiconductors
EAN (ISBN-13): 9783540714903
ISBN (ISBN-10): 3540714901
Tapa dura
Año de publicación: 2007
Editorial: Springer Berlin
383 Páginas
Peso: 0,771 kg
Idioma: eng/Englisch
Libro en la base de datos desde 2007-12-31T13:02:47-06:00 (Mexico City)
Página de detalles modificada por última vez el 2024-01-24T14:30:23-06:00 (Mexico City)
ISBN/EAN: 9783540714903
ISBN - escritura alterna:
3-540-71490-1, 978-3-540-71490-3
Mode alterno de escritura y términos de búsqueda relacionados:
Autor del libro: mcintyre, heyn, paul hey, macintyre, athanasios, wetzel, dimou, causa, guse
Título del libro: mobility, semiconductors, current veterinary therapy, gate, series advanced, microelectronics
Datos del la editorial
Autor: Athanasios Dimoulas; Evgeni Gusev; Paul C. McIntyre; Marc Heyns
Título: Springer Series in Advanced Microelectronics; Advanced Gate Stacks for High-Mobility Semiconductors
Editorial: Springer; Springer Berlin
384 Páginas
Año de publicación: 2007-11-21
Berlin; Heidelberg; DE
Impreso en
Idioma: Inglés
160,49 € (DE)
164,99 € (AT)
177,00 CHF (CH)
POD
XXII, 384 p.
BB; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Elektronik; Verstehen; Ingenieurwissenschaften; CMOS; Semiconductors; Standard; Transistors; dielectric properties; dielectrics; electronics; material; microelectronics; semiconductor; semiconductor devices; transistor; Electronics and Microelectronics, Instrumentation; EA; BC
Strained-Si CMOS Technology.- High Current Drivability MOSFET Fabricated on Si(110) Surface.- Advanced High-Mobility Semiconductor-on-Insulator Materials.- Passivation and Characterization of Germanium Surfaces.- Interface Engineering for High-? Ge MOSFETs.- Effect of Surface Nitridation on the Electrical Characteristics of Germanium High-?/Metal Gate Metal-Oxide-Semiconductor Devices.- Modeling of Growth of High-? Oxides on Semiconductors.- Physical, Chemical, and Electrical Characterization of High-? Dielectrics on Ge and GaAs.- Point Defects in Stacks of High-? Metal Oxides on Ge: Contrast with the Si Case.- High ? Gate Dielectrics for Compound Semiconductors.- Interface Properties of High-? Dielectrics on Germanium.- A Theoretical View on the Dielectric Properties of Crystalline and Amorphous High-? Materials and Films.- Germanium Nanodevices and Technology.- Opportunities and Challenges of Germanium Channel MOSFETs.- Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates.- Processing and Characterization of III–V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics.- Fabrication of MBE High-? MOSFETs in a Standard CMOS Flow.Comprehensive monograph on gate stacks in semiconductor technology Covers the major latest developments and basics A reference work for researchers, engineers and graduate students alike Includes supplementary material: sn.pub/extras
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