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Ion Implantation - Emanuele Rimini
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Emanuele Rimini:

Ion Implantation - libro nuevo

1995, ISBN: 0792395204

Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As … Más…

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Ion Implantation: Basics to Device Fabrication / Emanuele Rimini / Buch / The Springer International Series in Engineering and Computer Science / HC runder Rücken kaschiert / XIII / Englisch / 1994 - Rimini, Emanuele
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Rimini, Emanuele:

Ion Implantation: Basics to Device Fabrication / Emanuele Rimini / Buch / The Springer International Series in Engineering and Computer Science / HC runder Rücken kaschiert / XIII / Englisch / 1994 - encuadernado, tapa blanda

1994, ISBN: 9780792395201

[ED: Gebunden], [PU: Springer US], Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the… Más…

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Rimini, Emanuele:
Ion Implantation: Basics to Device Fabrication - encuadernado, tapa blanda

1994

ISBN: 9780792395201

Hard cover, New., Sewn binding. Cloth over boards. 393 p. Contains: Unspecified. The Springer International Engineering and Computer Science, 293., New York, NY, [PU: Springer]

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Ion Implantation : Basics to Device Fabrication - Rimini, E.; Rimini, Emanuele (physics Department, University Of Catania, Italy); Rimini, Emanuele
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Rimini, E.; Rimini, Emanuele (physics Department, University Of Catania, Italy); Rimini, Emanuele:
Ion Implantation : Basics to Device Fabrication - encuadernado, tapa blanda

1994, ISBN: 0792395204

[EAN: 9780792395201], Nouveau livre, [SC: 14.15], [PU: Springer], Books

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Rimini, Emanuele:
Ion Implantation: Basics to Device Fabrication (the Springer International Series in Engineering and Computer Science) - encuadernado, tapa blanda

1994, ISBN: 9780792395201

Hardcover, Nouveau livre, As new., [PU: Springer]

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Detalles del libro
Ion Implantation: Basics to Device Fabrication
Autor:
Título:
ISBN:

9780792395201


Ion Implantation: Basics to Device Fabrication is a collection of research dealing with several aspects of ion implantation, including basic information on the physics of devices, ion implanters, channeling implants, yield, damage and its annealing, in addition to a host of other topics. Particular attention has been paid to those techniques that provide two-dimensional profiles of damage and of dopants, a careful treatment of silicon based devices, threshold voltage control, shallow junctions, minority carrier lifetime control by metallic ion implants, and high energy implants is given in this work. This book, based on a course preceding the biannual Ion Implantation Technology Conference, is a valuable reference for physicists, chemists, materials scientists, processing, device production, device design, and ion beam engineers interested in any aspect of ion implantation, as well as a secondary text for a graduate course on the subject.

Detalles del libro - Ion Implantation: Basics to Device Fabrication


EAN (ISBN-13): 9780792395201
ISBN (ISBN-10): 0792395204
Tapa dura
Tapa blanda
Año de publicación: 1994
Editorial: Springer
410 Páginas
Peso: 0,771 kg
Idioma: eng/Englisch

Libro en la base de datos desde 2008-03-18T08:06:10-06:00 (Mexico City)
Página de detalles modificada por última vez el 2024-01-31T08:30:44-06:00 (Mexico City)
ISBN/EAN: 9780792395201

ISBN - escritura alterna:
0-7923-9520-4, 978-0-7923-9520-1
Mode alterno de escritura y términos de búsqueda relacionados:
Autor del libro: rimini, emanuele
Título del libro: ion, basics, rimini, computer science

Datos del la editorial

Autor: Emanuele Rimini
Título: The Springer International Series in Engineering and Computer Science; Ion Implantation: Basics to Device Fabrication
Editorial: Springer; Springer US
393 Páginas
Año de publicación: 1994-12-31
New York; NY; US
Idioma: Inglés
235,39 € (DE)
241,99 € (AT)
260,00 CHF (CH)
Available
XIII, 393 p.

BB; Hardcover, Softcover / Technik/Maschinenbau, Fertigungstechnik; Werkstoffprüfung; Verstehen; basic research; ion; material; radiation; semiconductor; silicon; Characterization and Analytical Technique; Inorganic Chemistry; Nuclear Physics; Anorganische Chemie; Atom- und Molekularphysik; EA; BC

1 Semiconductor Devices.- 1.1 Introduction.- 1.2 Semiconductor Physics.- 1.3 p-n Junction and Diode.- 1.4 Unipolar and Bipolar Transistors.- 1.5 Ion Implantation and Semiconductor Devices.- 1.6 Damage and Yield.- 1.7 Future Trend.- 2 Ion Implanters.- 2.1 Introduction.- 2.2 Ion Sources.- 2.3 High Energy Implanters.- 2.4 Magnetic Analyzer and Beam Transport.- 2.5 Energy Contamination.- 2.6 Scan System and Current Measurement.- 2.7 Wafer Cooling.- 2.8 Wafer Charging.- 2.9 Uniformity Control and Mapping.- 2.10 Contaminants and Yield.- 2.11 Plasma Immersion Ion Implantation.- 3 Range Distribution.- 3.1 Introduction.- 3.2 Elastic Stopping Power.- 3.3 Electronic Energy Loss.- 3.4 Depth Profile of Implanted Ions.- 3.5 Penetration Anomalies.- 3.6 Channeling Implants.- 3.7 Lateral Spreading.- 3.8 Simulation of Range Distribution.- 4 Radiation Damage.- 4.1 Introduction.- 4.2 Collision Cascade.- 4.3 Damage Distribution.- 4.4 Crystalline Defects.- 4.5 Primary Defects.- 4.6 Hot Implants.- 4.7 Ion Beam Induced Enhanced Crystallization.- 4.8 Ion Implantation into Localized Si Areas.- 5 Annealing and Secondary Defects.- 5.1 Introduction.- 5.2 Solid Phase Epitaxial Growth of Amorphous Silicon.- 5.3 Annealing of Low-Dose Heavy - Ion Implant.- 5.4 Regrowth of Amorphous Layer Under a Mask.- 5.5 Annealing of Heavily Disordered Regions.- 5.6 Rapid Thermal Processing.- 5.7 Impurity Diffusion During Annealing.- 5.8 Interaction of Impurities with Ion Implanted Defects.- 5.9 Defect Engineering.- 6 Analytical Techniques.- 6.1 Introduction.- 6.2 Secondary Ion Mass Spectrometry.- 6.3 Spreading Resistance Profilometry: One and Two Dimensional Analyses.- 6.4 Carrier and Mobility Profiles.- 6.5 Rutherford Backscattering and Channeling Effect.- 6.6 Transmission Electron Microscopy.- 7 Silicon Based Devices.- 7.1 Introduction.- 7.2 Threshold Voltage Control in MOSFET.- 7.3 Short Channel Effects.- 7.4 Shallow Junctions.- 7.5 Complementary MOS Devices and Technology.- 7.6 Lifetime Engineering in Power Devices.- 7.7 High Energy Implant Applications.- 7.8 High-Speed Bipolar Transistors.- 8 Ion Implantation in Compound Semi-Conductor and Buried Layer Synthesis.- 8.1 Introduction.- 8.2 Ion Implantation in GaAs.- 8.3 Ion Implantation in InP.- 8.4 Isolation of III-V Semiconductors.- 8.5 Isolation of Superlattice and Quantum Well Structures.- 8.6 Synthesis of Buried Dielectric.- 8.7 Devices in SOI Substrates.- 8.8 Buried Metal Layer Formation.- 8.9 Compound Semiconductor Based Devices.- Selected References.- References.

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