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Ferroelectric Memories | James F. Scott | Taschenbuch | Springer Series in Advanced Microelectronics | Paperback | XVI | Englisch | 2010 | Springer-Verlag GmbH | EAN 9783642085659 - Scott, James F.
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Scott, James F.:

Ferroelectric Memories | James F. Scott | Taschenbuch | Springer Series in Advanced Microelectronics | Paperback | XVI | Englisch | 2010 | Springer-Verlag GmbH | EAN 9783642085659 - Pasta blanda

2010, ISBN: 9783642085659

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[ED: Taschenbuch], [PU: Springer-Verlag GmbH], This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, testing, and device phy… Más…

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Ferroelectric Memories (Springer Series in Advanced Microelectronics) (Springer Series in Advanced Microelectronics, 3, Band 3) - Scott, James F.
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Scott, James F.:

Ferroelectric Memories (Springer Series in Advanced Microelectronics) (Springer Series in Advanced Microelectronics, 3, Band 3) - Pasta blanda

2010, ISBN: 9783642085659

Springer, Taschenbuch, Auflage: Softcover reprint of hardcover 1st ed. 2000, 268 Seiten, Publiziert: 2010-12-15T00:00:01Z, Produktgruppe: Buch, Hersteller-Nr.: 170 black & white illustrat… Más…

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Ferroelectric Memories (Springer Series in Advanced Microelectronics) (Springer Series in Advanced Microelectronics, 3, Band 3) - Scott, James F.
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Scott, James F.:
Ferroelectric Memories (Springer Series in Advanced Microelectronics) (Springer Series in Advanced Microelectronics, 3, Band 3) - Pasta blanda

2010

ISBN: 9783642085659

Springer, Taschenbuch, Auflage: Softcover reprint of hardcover 1st ed. 2000, 268 Seiten, Publiziert: 2010-12-15T00:00:01Z, Produktgruppe: Buch, Hersteller-Nr.: 170 black & white illustrat… Más…

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Ferroelectric Memories - James F. Scott
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James F. Scott:
Ferroelectric Memories - Primera edición

2010, ISBN: 9783642085659

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Ferroelectric Memories - James F. Scott
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James F. Scott:
Ferroelectric Memories - Pasta blanda

2000, ISBN: 9783642085659

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Ferroelectric Memories ab 149.99 € als Taschenbuch: Softcover reprint of hardcover 1st ed. 2000. Aus dem Bereich: Bücher, Taschenbücher, Naturwissenschaft, Medien > Bücher nein Taschenbuc… Más…

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Detalles del libro
Ferroelectric Memories (Springer Series in Advanced Microelectronics) (Springer Series in Advanced Microelectronics, 3, Band 3)

This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, testing, and device physics, as well as on breakdown, leakage currents, switching mechanisms, and fatigue. State-of-the-art device designs are included and illustrated among the books many figures. More than 500 up-to-date references and 76 problems make it useful as a research reference for physicists, engineers and students.

Detalles del libro - Ferroelectric Memories (Springer Series in Advanced Microelectronics) (Springer Series in Advanced Microelectronics, 3, Band 3)


EAN (ISBN-13): 9783642085659
ISBN (ISBN-10): 3642085652
Tapa dura
Tapa blanda
Año de publicación: 2010
Editorial: Springer
264 Páginas
Peso: 0,405 kg
Idioma: eng/Englisch

Libro en la base de datos desde 2011-12-09T06:30:13-06:00 (Mexico City)
Página de detalles modificada por última vez el 2023-12-08T12:18:54-06:00 (Mexico City)
ISBN/EAN: 9783642085659

ISBN - escritura alterna:
3-642-08565-2, 978-3-642-08565-9
Mode alterno de escritura y términos de búsqueda relacionados:
Autor del libro: james scott, james frazier
Título del libro: thanks for the memories, ferro, james scott james scott


Datos del la editorial

Autor: James F. Scott
Título: Springer Series in Advanced Microelectronics; Ferroelectric Memories
Editorial: Springer; Springer Berlin
248 Páginas
Año de publicación: 2010-12-15
Berlin; Heidelberg; DE
Impreso en
Idioma: Inglés
160,49 € (DE)
164,99 € (AT)
177,00 CHF (CH)
POD
XVI, 248 p. 95 illus.

BC; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Elektronik; Verstehen; RAM; Random Access Memory; ceramics; ferroelectrics; memories; non-volatille; physics; thin films; Electronics and Microelectronics, Instrumentation; Computer Engineering and Networks; Applied and Technical Physics; Metals and Alloys; Computer Memory Structure; Computerhardware; Angewandte Physik; Materialwissenschaft; BB; EA

Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production. This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. Intended for applied physicists, electrical engineers, materials scientists and ceramists, it includes ferroelectric fundamentals, especially for thin films, circuit diagrams and processsing chapters, but emphazises device physics. Breakdown mechanisms, switching kinetics and leakage current mechanisms have lengthly chapters devoted to them. The book will be welcomed by research scientists in industry and government laboratories and in universities. It also contains 76 problems for students, making it particularly useful as a textbook for fourth-year undergraduate or first-year graduate students.
State-of-the-art device designs are illustrated among the book's many figures. More than 500 up-to-date references and 76 problems for students make the book useful both as a research reference and as a text for graduate or advanced undergraduate students. This book is the only single-authored one in the field, all the other are edited collections of papers.

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