2007, ISBN: 9783540793656

The spin degree-of-freedom is o?ering a wide range of intriguing oppor- nities both in fundamental as well as in applied solid-state physics. When combined with the rich and fertile physi… Más…

The spin degree-of-freedom is o?ering a wide range of intriguing oppor- nities both in fundamental as well as in applied solid-state physics. When combined with the rich and fertile physics of low-dimensional semicondu- ingstructuresandwiththepossibilitytochange,forexample,carrierdensity, electric ?elds or coupling to other quantum systems in a controlled way, an extremely exciting and interesting research ?eld is opened. Most comm- cial electronic devices are based on spin-independent charge transport. In the last two decades, however, scientists have been focusing on the ambitious objective of exploiting the spin degree-of-freedom of the electron to achieve novel functionalities. Ferromagnetic semiconductors, spin transistors, sing- spin manipulations or spin-torque MRAMs (magnetoresistive random access memories) are some of the hot topics. The importance of spin phenomena for new applications was recognized by the Royal Swedish Academy of S- ences by awarding the 2007 Nobel Prize in Physics jointly to Albert Fert and Peter Grun ¿ berg 'for the discovery of giant magnetoresistance'. This - fect originates from spin-dependent scattering phenomena in a two-terminal ferromagnetic-paramagnetic-ferromagnetic junction leading to a new type of magnetic memory. The Hall e?ect and its applications remain fertile - search areas. The spin Hall e?ect, in analogy with the conventional Hall e?ect, occurs in paramagnetic systems as a result of spin-orbit interaction. eBooks > Fremdsprachige eBooks > Englische eBooks > Sach- & Fachthemen > Technik; eBooks > Fachbücher > Ingenieurwissenschaften; eBooks > Fachbücher > Physik & Astronomie; eBooks > Fremdsprachige eBooks > Englische eBooks > Sach- & Fachthemen > Physik , Springer, PDF, Springer<

2009, ISBN: 9783540793656

The spin degree-of-freedom is o?ering a wide range of intriguing oppor- nities both in fundamental as well as in applied solid-state physics. When combined with the rich and fertile physi… Más…

The spin degree-of-freedom is o?ering a wide range of intriguing oppor- nities both in fundamental as well as in applied solid-state physics. When combined with the rich and fertile physics of low-dimensional semicondu- ingstructuresandwiththepossibilitytochange,forexample,carrierdensity, electric ?elds or coupling to other quantum systems in a controlled way, an extremely exciting and interesting research ?eld is opened. Most comm- cial electronic devices are based on spin-independent charge transport. In the last two decades, however, scientists have been focusing on the ambitious objective of exploiting the spin degree-of-freedom of the electron to achieve novel functionalities. Ferromagnetic semiconductors, spin transistors, sing- spin manipulations or spin-torque MRAMs (magnetoresistive random access memories) are some of the hot topics. The importance of spin phenomena for new applications was recognized by the Royal Swedish Academy of S- ences by awarding the 2007 Nobel Prize in Physics jointly to Albert Fert and Peter Grun ¿ berg 'for the discovery of giant magnetoresistance'. This - fect originates from spin-dependent scattering phenomena in a two-terminal ferromagnetic-paramagnetic-ferromagnetic junction leading to a new type of magnetic memory. The Hall e?ect and its applications remain fertile - search areas. The spin Hall e?ect, in analogy with the conventional Hall e?ect, occurs in paramagnetic systems as a result of spin-orbit interaction. eBook Springer PDF, Springer, 24.08.2009, Springer, 2009<

2009, ISBN: 9783540793656

This book is devoted to the discussion of the state of the art of spin resonance in low dimensional structures, such as two -dimensional electron systems, quantum wires, and quantum dots.… Más…

This book is devoted to the discussion of the state of the art of spin resonance in low dimensional structures, such as two -dimensional electron systems, quantum wires, and quantum dots. World leading scientists in the field report on recent advances and discuss open issues and perspectives. Frontiers and opportunities for spin resonance techniques, with particular emphasis on fundamental physics, nanoelectronics, spintronics and quantum information processing, are discussed. eBook Springer 24.08.2009, Springer, Springer<

2009, ISBN: 9783540793656

eBooks, eBook Download (PDF), 2009, [PU: Springer Berlin], Seiten: 261, Springer Berlin, 2009

2009, ISBN: 9783540793656

eBooks, eBook Download (PDF), 2009, [PU: Springer Berlin], Springer Berlin, 2009