2001, ISBN: 9783709103814
[ED: Buch], [PU: Springer-Verlag KG], Neuware - Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools req… Más…
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2010, ISBN: 3709103819
[EAN: 9783709103814], Neubuch, [PU: Springer Vienna], ELEKTRONIK MIKROELEKTRONIK INGENIEURWISSENSCHAFT - INGENIEURWISSENSCHAFTLER TECHNIK ELEKTROTECHNIK NACHRICHTENTECHNIK SEMICONDUCTOR D… Más…
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Straininduced Effects in Advanced Mosfets Computational Microelectronics - encuadernado, tapa blanda
2011, ISBN: 9783709103814
Hardcover, PLEASE NOTE, WE DO NOT SHIP TO DENMARK. New Book from multilingual publisher. Shipped from UK within 4 to 14 days. Please check language within the description., [PU: Springer]
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Straininduced Effects in Advanced Mosfets Computational Microelectronics - encuadernado, tapa blanda
2011, ISBN: 9783709103814
Hardcover, New Book from multilingual publisher. Shipped from UK within 4 to 14 days. Please check language within the description., [PU: Springer]
| alibris.co.uk |
2010, ISBN: 9783709103814
Hard cover, New., Sewn binding. Cloth over boards. 252 p. Contains: Tables, black & white. Computational Microelectronics., Vienna, [PU: Springer]
| alibris.co.uk |
2001, ISBN: 9783709103814
[ED: Buch], [PU: Springer-Verlag KG], Neuware - Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools req… Más…
2010, ISBN: 3709103819
[EAN: 9783709103814], Neubuch, [PU: Springer Vienna], ELEKTRONIK MIKROELEKTRONIK INGENIEURWISSENSCHAFT - INGENIEURWISSENSCHAFTLER TECHNIK ELEKTROTECHNIK NACHRICHTENTECHNIK SEMICONDUCTOR D… Más…
Straininduced Effects in Advanced Mosfets Computational Microelectronics - encuadernado, tapa blanda
2011
ISBN: 9783709103814
Hardcover, PLEASE NOTE, WE DO NOT SHIP TO DENMARK. New Book from multilingual publisher. Shipped from UK within 4 to 14 days. Please check language within the description., [PU: Springer]
Straininduced Effects in Advanced Mosfets Computational Microelectronics - encuadernado, tapa blanda
2011, ISBN: 9783709103814
Hardcover, New Book from multilingual publisher. Shipped from UK within 4 to 14 days. Please check language within the description., [PU: Springer]
2010, ISBN: 9783709103814
Hard cover, New., Sewn binding. Cloth over boards. 252 p. Contains: Tables, black & white. Computational Microelectronics., Vienna, [PU: Springer]
Datos bibliográficos del mejor libro coincidente
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Detalles del libro - Strain-Induced Effects in Advanced MOSFETs (Computational Microelectronics)
EAN (ISBN-13): 9783709103814
ISBN (ISBN-10): 3709103819
Tapa dura
Año de publicación: 2010
Editorial: Springer
252 Páginas
Peso: 0,633 kg
Idioma: eng/Englisch
Libro en la base de datos desde 2011-04-09T14:17:05-05:00 (Mexico City)
Página de detalles modificada por última vez el 2023-07-05T11:56:42-06:00 (Mexico City)
ISBN/EAN: 9783709103814
ISBN - escritura alterna:
3-7091-0381-9, 978-3-7091-0381-4
Mode alterno de escritura y términos de búsqueda relacionados:
Autor del libro: viktor
Título del libro: mosfet, mosfets, viktor, microelectronics
Datos del la editorial
Autor: Viktor Sverdlov
Título: Computational Microelectronics; Strain-Induced Effects in Advanced MOSFETs
Editorial: Springer; Springer Wien
252 Páginas
Año de publicación: 2010-11-24
Vienna
Idioma: Inglés
160,49 € (DE)
164,99 € (AT)
177,00 CHF (CH)
Available
XIV, 252 p.
BB; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Elektronik; Verstehen; semiconductor devices; strain technique; transport modeling; Electronics and Microelectronics, Instrumentation; EA; BC
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is givencomprehensive overview of strain techniques accurate description of strain induced modifications of the valence and conduction bands overview of transport modeling in strain devices Includes supplementary material: sn.pub/extras
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